JPH0368543B2 - - Google Patents
Info
- Publication number
- JPH0368543B2 JPH0368543B2 JP63121705A JP12170588A JPH0368543B2 JP H0368543 B2 JPH0368543 B2 JP H0368543B2 JP 63121705 A JP63121705 A JP 63121705A JP 12170588 A JP12170588 A JP 12170588A JP H0368543 B2 JPH0368543 B2 JP H0368543B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- gate
- film
- voltage
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 149
- 229910004298 SiO 2 Inorganic materials 0.000 description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 53
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 45
- 229910052782 aluminium Inorganic materials 0.000 description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 34
- 229910052698 phosphorus Inorganic materials 0.000 description 32
- 239000011574 phosphorus Substances 0.000 description 32
- 239000011521 glass Substances 0.000 description 28
- 239000000872 buffer Substances 0.000 description 27
- 108091006146 Channels Proteins 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 238000001259 photo etching Methods 0.000 description 11
- 108091007045 Cullin Ring E3 Ligases Proteins 0.000 description 10
- 102000036364 Cullin Ring E3 Ligases Human genes 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- -1 phosphorus ions Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 102100038497 Cytokine receptor-like factor 2 Human genes 0.000 description 1
- 101000685663 Homo sapiens Sodium/nucleoside cotransporter 1 Proteins 0.000 description 1
- 101000821827 Homo sapiens Sodium/nucleoside cotransporter 2 Proteins 0.000 description 1
- 101000822028 Homo sapiens Solute carrier family 28 member 3 Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 108091007047 SCF complex Proteins 0.000 description 1
- 102000036366 SCF complex Human genes 0.000 description 1
- 108091007110 SCF2 complex Proteins 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 102100023116 Sodium/nucleoside cotransporter 1 Human genes 0.000 description 1
- 102100021541 Sodium/nucleoside cotransporter 2 Human genes 0.000 description 1
- 102100021470 Solute carrier family 28 member 3 Human genes 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63121705A JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63121705A JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6394179A Division JPS55156370A (en) | 1979-05-25 | 1979-05-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02371A JPH02371A (ja) | 1990-01-05 |
| JPH0368543B2 true JPH0368543B2 (en]) | 1991-10-28 |
Family
ID=14817842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63121705A Granted JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02371A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4506930B2 (ja) * | 2003-05-14 | 2010-07-21 | セイコーエプソン株式会社 | 不揮発性記憶装置を含む半導体装置 |
| JP5025703B2 (ja) | 2009-09-25 | 2012-09-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP4507023B2 (ja) * | 2009-12-07 | 2010-07-21 | セイコーエプソン株式会社 | 不揮発性記憶装置を含む半導体装置 |
-
1988
- 1988-05-20 JP JP63121705A patent/JPH02371A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02371A (ja) | 1990-01-05 |
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